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c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 www. ruichips .com ru 3023 0r n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 2 0 v t j maximum junction temperat ure 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 2 3 0 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 92 0 a t c =25 c 23 0 i d continuous drain current t c =100 c 16 0 a t c =25 c 300 p d maximum power dissipation t c =100 c 150 w r q jc thermal resistance - junction to case 0.5 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 1 1 2 0 m j ? 3 0 v/ 23 0a, r ds ( on ) = 2 m w (typ. ) @ v gs =10v , i ds = 75 a r ds ( on ) = 2 .5 m w (typ. ) @ v gs = 4.5 v , i ds = 60 a ? ult ra low on - resistance ? fast switching and fully avalanche rated ? 100% avalanche tested ? 175c operating temperature ? lead free and green available ? dc/dc converters ? ups absolute maximum ratings to - 220 to - 220f to - 263 to - 247 n - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 2 www. ruichips .com ru 3023 0r electrical characteristics ( t c =25 c unless otherwise noted) ru 3023 0r symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds =250 m a 3 0 v v ds = 3 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1 2 3 v i gss gate leakage current v gs = 2 0 v, v ds =0v 100 n a v gs = 10 v, i ds = 75 a 2 3 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 60 a 2.5 5 m w notes : pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. limited by t jmax , i as = 67 a, v dd = 24 v, r g = 50 , startin g t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 75 a, v gs =0v 1. 2 v t rr reverse recovery time 90 ns q rr reverse recovery charge i sd = 75 a, dl sd /dt=100a/ m s 1 1 5 nc dynamic cha racteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 2 . 0 w c iss input capacitance 6 3 4 0 c oss output capacitance 11 7 0 c rss reverse transfer capacitance v gs =0v, v ds = 15 v, frequency=1.0mhz 6 4 0 pf t d ( on ) turn - on delay time 25 t r turn - on rise time 1 6 0 t d ( off ) turn - off delay time 1 4 0 t f turn - off fall time v dd = 15 v, r l = 0.2 w , i ds = 7 5 a, v gen = 10v, r g = 6 w 1 1 5 ns gate charge characteristics q g total gate charge 1 3 0 170 q gs gate - source charge 3 0 q gd ga te - drain charge v ds = 24 v, v gs = 10v, i ds = 75 a 4 0 nc
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 3 www. ruichips .com ru 3023 0r typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - sou rce voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 4 www. ruichips .com ru 3023 0r typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 5 www. ruichips .com ru 3023 0r typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempera ture (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 6 www. ruichips .com ru 3023 0r avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 7 www. ruichips .com ru 3023 0r ordering and marking information ru 3023 0 package (available) r : to - 220; s: to - 263 ; q: to - 247 operating temperature range c : - 55 to 175 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 8 www. ruichips .com ru 3023 0r package information to - 220fb - 3l all dimens ions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 9 www. ruichips .com ru 3023 0r to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l 2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 10 www. ruichips .com ru 3023 0r to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 ref 0.142 re f a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0.000 0.012 e1 3.500 ref. 0.138 ref.
c opyright ruichips semiconductor co . , ltd rev . b C jun ., 2011 11 www. ruichips .com ru 3023 0r customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.c om editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com

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